The nature of interface defects in a-Si:H/a-Si1−x Nx:H multilayers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Observation of Light-Induced Phenomena by Photoluminescence and Optically Detected Magnetic Resonance in a-Si:H
2. Observation of Light-Induced Phenomena by Photoluminescence and Optically Detected Magnetic Resonance in a-Si1-xNx:H
3. Interface defects in a-Si: H/a-Si3N4: H superlattices as elucidated from photothermal deflection spectroscopy measurements
4. Characterization of a-Si:H/a-Si1−xNx:H superlattice films by photoluminescence measurements: The correlation between the preparation condition and the film quality
5. The temperature dependence of luminescence from a-Si: H/a-Si3N4: H superlattices
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Interface defects and their roles in light-induced phenomena in a-Si:H/a-Si1−xNx:H multilayers;Physical Review B;1997-01-15
2. Photoluminescence and optically detected magnetic resonance in a-Si:H/a-Si3N4:H multilayers;Physical Review B;1997-01-15
3. Bond-Angle Variation and Microstructure in Hydrogenated Amorphous Silicon;MRS Proceedings;1992
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