The temperature dependence of luminescence from a-Si: H/a-Si3N4: H superlattices
Author:
Affiliation:
1. a Institute for Solid State Physics, University of Tokyo , Roppongi, Tokyo , 106 , Japan
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818908228821
Reference12 articles.
1. Charged defect-pair luminescence in a-As2S3
2. Luminescence of Amorphous Silicon Superlattices
3. Electrical, optical and luminescence properties of a-Si/SiN multilayers
4. Optical properties of a-Si:H/a-Si1−xCx:H and a-Si:H/a-SiNx:H superlattice
5. Time-resolved optically detected magnetic resonance in a-Si:H/a-Si1−xNx:H superlattices
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1. NANOCRYSTALLINE AND AMORPHOUS THIN FILM SYSTEMS INCLUDING LOW-DIMENSIONAL CHALCOGENIDE MATERIALS;Handbook of Surfaces and Interfaces of Materials;2001
2. Photoluminescence and optically detected magnetic resonance in a-Si:H/a-Si3N4:H multilayers;Physical Review B;1997-01-15
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4. Band and subband absorption of Se/CdSe amorphous multilayers;Philosophical Magazine B;1994-08
5. The nature of interface defects in a-Si:H/a-Si1−x Nx:H multilayers;Journal of Non-Crystalline Solids;1991-01
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