Radiative emission properties of a-SiN:H based nanometric multilayers for light emitting devices
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
Reference13 articles.
1. Photoluminescence of tetrahedrally coordinateda-Si1−xCx:H
2. Static versus electron-phonon disorder in amorphous Si: H and its alloys
3. Visible-Light Injection-Electroluminescent a-SiC/p-i-n Diode
4. Visible thin film light emitting diode using a-SiN:H/a-SiC:H heterojunctions
5. Optical and photoluminescence properties of a-Si1−x N x : H/a-Si3N4: H and a-Si1−x C x : H/a-SiC: H superlattices
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1. Emission Evolution of α-Silicon Nitride Nanowires with Temperature;Journal of Nanoscience and Nanotechnology;2011-11-01
2. Experimental determination of the sensitivity of Bloch Surface Waves based sensors;Optics Express;2010-04-01
3. Optoelectronic Characteristics of Direct-Current and Alternating-Current White Thin-Film Light-Emitting Diodes Based on Hydrogenated Amorphous Silicon Nitride Film;IEEE Transactions on Electron Devices;2008-04
4. Deposition of luminescent a-SiN x :H Films with SiH4–N2 gas mixture by VHF–PECVD using novel impedance matching method;Journal of Materials Science: Materials in Electronics;2007-03-20
5. Second harmonic generation analysis in hydrogenated amorphous silicon nitride thin films;Applied Physics Letters;2007-01-08
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