Frequency resolved spectroscopy in a-Si:H/a-Si1−N :H multilayers and band-edge modulated a-Si1−N :H alloys
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Preparation and optical absorption spectra of a new type of artificial semiconducting material: Band-edge-modulated a-Si1-xNx:H films
2. Distribution of lifetime of photoluminescence in band-edge modulated a-Si1 − xNx:H films
3. Frequency-resolved spectroscopy and its application to the analysis of recombination in semiconductors
4. Lifetime distribution in a-Si:H: geminate-, nongeminate- and auger-processes
5. Geminate recombination in a-Si:H
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1. Study of Radiative Recombination Rate of Electron–hole Pairs in Hydrogenated Amorphous Silicon by Means of Frequency Resolved Spectroscopy;Journal of the Physical Society of Japan;2019-02-15
2. Amorphous Semiconductors: Structure, Optical, and Electrical Properties;Springer Handbook of Electronic and Photonic Materials;2017
3. Hydrogenated Microcrystalline Silicon;Light-Induced Defects in Semiconductors;2014-09-13
4. Amorphous Semiconductors: Structure, Optical, and Electrical Properties;Springer Handbook of Electronic and Photonic Materials;2006
5. Lifetime and intensity of photoluminescence after light induced creation of dangling bonds in a-Si:H;Journal of Non-Crystalline Solids;2002-04
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