Reversing the shape transition of InAs/GaAs (001) quantum dots by etching-induced lateral In segregation-Reference-Cited by-同舟云学术

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Reversing the shape transition of InAs/GaAs (001) quantum dots by etching-induced lateral In segregation

Published:2010-05-10 Issue:20 Volume:81 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Lutz T.,Suzuki T.,Costantini G.,Wang L.,Kiravittaya S.,Rastelli A.,Schmidt O. G.,Kern K.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.81.205414/fulltext

Reference25 articles.

1. Structural properties of self-organized semiconductor nanostructures

2. Punctuated island growth: An approach to examination and control of quantum dot density, size, and shape evolution

3. Shape transition during epitaxial growth ofInAsquantum dots onGaAs(001): Theory and experiment

4. Shape transition of InAs quantum dots on GaAs(001)

5. Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth

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1. A self-assembling method to align metal nanoparticles to quantum dots;Journal of Crystal Growth;2023-03

2. Application of a fractional algorithm to studying the competition between dissipation and fluctuation in non-Markov process;Acta Physica Sinica;2013

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