Experimental study of Si substitution by Ge in Ge-alloyed SiC epitaxial growth on6H−SiC(0001)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.67.125316/fulltext
Reference27 articles.
1. Growth and characterization of self-assembled Ge-rich islands on Si
2. Synthesis of Si1−yCyalloys by molecular beam epitaxy
3. Third-nearest-neighbor carbon pairs in epitaxialSi1−yCyalloys: Local order for carbon in silicon characterized by x-ray photoelectron diffraction and Raman spectroscopy
4. Growth of germanium‐carbon alloys on silicon substrates by molecular beam epitaxy
5. Synthesis and characterization of heteroepitaxial diamond‐structured Ge1−xCx (x=1.5–5.0%) alloys using chemical vapor deposition
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