Isolated oxygen defects in3C- and4H-SiC: A theoretical study
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.125208/fulltext
Reference32 articles.
1. Bonding Arrangements at theSi−SiO2andSiC−SiO2Interfaces and a Possible Origin of their Contrasting Properties
2. New Oxygen Infrared Bands in Annealed Irradiated Silicon
3. Oxygen-Related Defect Centers in 4H Silicon Carbide
4. Oxygen in silicon carbide: shallow donors and deep acceptors
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