Bonding Arrangements at theSi−SiO2andSiC−SiO2Interfaces and a Possible Origin of their Contrasting Properties
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.84.943/fulltext
Reference21 articles.
1. Atomic-Scale Mechanisms of Oxygen Precipitation and Thin-Film Oxidation of SiC
2. Microscopic structure of theSiO2/Si interface
3. Si2pCore-Level Shifts at the Si(001)-SiO2Interface: A First-Principles Study
4. Si→SiO2transformation: Interfacial structure and mechanism
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