Equilibrium and nonequilibrium gap-state distribution in amorphous silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.13295/fulltext
Reference24 articles.
1. Structure and Electronic States in Disordered Systems
2. Chemical-equilibrium description of the gap-state distribution ina-Si:H
3. Defect formation ina-Si:H
4. Equilibrium and non-equilibrium gap state distribution in a-Si:H
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1. Transport studies of carbon-rich a-SiCx:H film through admittance and deep-level transient spectroscopy measurements;Philosophical Magazine;2006-07
2. Correlation between the results of charge deep-level transient spectroscopy and ESR techniques for undoped hydrogenated amorphous silicon;Physical Review B;2002-11-18
3. Gap state distribution in amorphous hydrogenated silicon carbide films deduced from photothermal deflection spectroscopy;Journal of Applied Physics;2002-04
4. Effects of visible light illumination during plasma enhanced chemical vapor deposition growth on the film properties of hydrogenated amorphous silicon;Journal of Applied Physics;2002-01-15
5. Theoretical and experimental study of the quasistatic capacitance of metal-insulator–hydrogenated amorphous silicon structures: Strong evidence for the defect-pool model;Physical Review B;1998-10-15
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