Theoretical and experimental study of the quasistatic capacitance of metal-insulator–hydrogenated amorphous silicon structures: Strong evidence for the defect-pool model-Reference-Cited by-同舟云学术

Theoretical and experimental study of the quasistatic capacitance of metal-insulator–hydrogenated amorphous silicon structures: Strong evidence for the defect-pool model

Published:1998-10-15 Issue:16 Volume:58 Page:10401-10414
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Kleider J. P.,Dayoub F.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.10401/fulltext

Reference33 articles.

1. Structure and Electronic States in Disordered Systems

2. Theories of defects in amorphous semiconductors

3. Thermal-Equilibrium Defect Processes in Hydrogenated Amorphous Silicon

4. Band tails, entropy, and equilibrium defects in hydrogenated amorphous silicon

5. The defect density in amorphous silicon

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