Capacitance techniques for the evaluation of electronic properties and defects in disordered thin film semiconductors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference27 articles.
1. Interpretation of the conductance and capacitance frequency dependence of hydrogenated amorphous silicon Schottky barrier diodes
2. Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy
3. Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap states
4. Determination of the Density of State Distribution of a-Si:H by Isothermal Capacitance Transient Spectroscopy
5. Energy dependence of electron-capture cross section of gap states inn-typea-Si:H
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1. Revisiting the theory and usage of junction capacitance: Application to high efficiency amorphous/crystalline silicon heterojunction solar cells;Solar Energy Materials and Solar Cells;2015-04
2. Properties of a-SiGe:H thin films: correlation between photosensitivity and density of states;physica status solidi (c);2014-09-17
3. Study of the properties of solar cells based on a-Si:H p-i-n structures by admittance spectroscopy;Semiconductors;2013-08
4. Characterization of space charge layer deep defects in n+-CdS/p-CdTe solar cells by temperature dependent capacitance spectroscopy;Journal of Applied Physics;2013-04-14
5. Space charge capacitance spectroscopy in amorphous silicon Schottky diodes: Theory, modeling, and experiments;Journal of Non-Crystalline Solids;2012-09
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