The defect density in amorphous silicon
Author:
Affiliation:
1. a Max-Planck-Institut für Festkörperforschung , Heisenbergstraße 1, D-7000 Stüttgart 80, F.R. Germany
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818908205926
Reference35 articles.
1. The contribution of the staebler-wronski effect to gap-state absorption in hydrogenated amorphous silicon
2. Structure and Electronic States in Disordered Systems
3. Determination of the hydrogen diffusion coefficient in hydrogenated amorphous silicon from hydrogen effusion experiments
4. Hydrogen evolution and defect creation in amorphous Si: H alloys
5. A SIMS analysis of deuterium diffusion in hydrogenated amorphous silicon
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