Correlation between the results of charge deep-level transient spectroscopy and ESR techniques for undoped hydrogenated amorphous silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.195211/fulltext
Reference25 articles.
1. Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy
2. Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap states
3. Identification of the Dangling-Bond State within the Mobility Gap ofa-Si: H by Depletion-Width-Modulated ESR Spectroscopy
4. Observation of a Reversible Field-Induced Doping Effect in Hydrogenated Amorphous Silicon
5. Deposition and extensive light soaking of highly pure hydrogenated amorphous silicon
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1. Determination of trapping–detrapping events, recombination processes and gap-state parameters by modulated photocurrent measurements on amorphous silicon;Philosophical Magazine;2014-05-15
2. Features of the structure and defect states in hydrogenated polymorphous silicon films;JETP Letters;2013-06
3. Characterization of defects in hydrogenated amorphous silicon deposited on different substrates by capacitance techniques;Thin Solid Films;2011-06
4. Study of microstructural and optical properties of a-Si:H thin films;17th Slovak-Czech-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics;2010-09-24
5. Metastable defect creation in tritiated hydrogenated amorphous silicon and the Staebler–Wronski effect;Journal of Materials Science: Materials in Electronics;2007-03-20
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