Transport studies of carbon-rich a-SiCx:H film through admittance and deep-level transient spectroscopy measurements
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/14786430500377791
Reference82 articles.
1. Kelner, G and Shur, M. 1995.Properties of Silicon Carbide, Edited by: Harris, GL. 231–273. London: INSPEC.
2. Transport in tunneling recombination junctions: A combined computer simulation study
3. Annealing effects of highly homogeneous a-Si1−xCx:H
4. Electroluminescence characteristics and current-conduction mechanism of a-SiC:H p-i-n thin-film light-emitting diodes with barrier layer inserted at p-i interface
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3. Amorphous SixC1−x:H single layers before and after thermal annealing: Correlating optical and structural properties;Solar Energy Materials and Solar Cells;2010-11
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