Crystalline silicon interface passivation improvement with a-Si1−xCx:H and its application in hetero-junction solar cells with intrinsic layer
Author:
Funder
National Science Council Taiwan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4770308
Reference24 articles.
1. Twenty-two percent efficiency HIT solar cell
2. Amorphous silicon as a passivant for crystalline silicon
3. Stretched-exponential a-Si:H∕c-Si interface recombination decay
4. Interplay of amorphous silicon disorder and hydrogen content with interface defects in amorphous/crystalline silicon heterojunctions
5. Excellent crystalline silicon surface passivation by amorphous silicon irrespective of the technique used for chemical vapor deposition
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3. An intrinsic amorphous silicon oxide and amorphous silicon stack passivation layer for crystalline silicon heterojunction solar cells;Thin Solid Films;2017-04
4. Strain-Controlled of Compressive/Tensile Ge Epilayers on Si by Electron Cyclotron Resonance Chemical Vapor Deposition;ECS Journal of Solid State Science and Technology;2016
5. Investigation of interface quality and passivation improvement with a-SiO:H deposited by ECRCVD at low temperature;Journal of Non-Crystalline Solids;2015-03
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