Electroluminescence characteristics and current-conduction mechanism of a-SiC:H p-i-n thin-film light-emitting diodes with barrier layer inserted at p-i interface-Reference-Cited by-同舟云学术

Electroluminescence characteristics and current-conduction mechanism of a-SiC:H p-i-n thin-film light-emitting diodes with barrier layer inserted at p-i interface

Published:1994 Issue:10 Volume:41 Page:1761-1769
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Tean-Sen Jen ,Jen-Wei Pan ,Nerng-Fu Shin ,Jyh-Wong Hong ,Chun-Yen Chang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/7728/00324586.pdf?arnumber=324586

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of the substrate conductivity type on the electroluminescence properties of PP+IN and PIN+N diodes based on amorphous silicon carbide (a-Si1-xCx:H) / crystalline silicon (c-Si) heterostructures;Journal of Alloys and Compounds;2024-05

2. Transport studies of carbon-rich a-SiCx:H film through admittance and deep-level transient spectroscopy measurements;Philosophical Magazine;2006-07

3. Frequency dependence of conductivity in intrinsic amorphous silicon carbide film, assessed through admittance measurement of metal insulator semiconductor structure;Thin Solid Films;2006-02

4. Double Graded-Gap Hydrogenated Amorphous Silicon Carbide Thin-Film Light-Emitting Diode with Composition-Graded N Layer and Carbon-Increasing P Layer;Japanese Journal of Applied Physics;1996-02-28

5. Brightness Degradation Controlled by Current Induced Metastable Defect Creation in a-SiC:H Based Light Emitting Diodes;MRS Proceedings;1995