Double Graded-Gap Hydrogenated Amorphous Silicon Carbide Thin-Film Light-Emitting Diode with Composition-Graded N Layer and Carbon-Increasing P Layer-Reference-Cited by-同舟云学术

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Double Graded-Gap Hydrogenated Amorphous Silicon Carbide Thin-Film Light-Emitting Diode with Composition-Graded N Layer and Carbon-Increasing P Layer

Published:1996-02-28 Issue:Part 1, No. 2B Volume:35 Page:1018-1021
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen Yen-Ann,Chen Jyh-Kuan,Tsay Wen-Chin,Laih Li-Hong,Hong Jyh-Wong,Chang Chun-Yen

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Carrier Injection Type Thin-Film Light-Emitting Diode with Hydrogenated Amorphous Carbon Active Layer;Japanese Journal of Applied Physics;1997-09-15

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