Vacancies and interstitials in indium nitride: Vacancy clustering and molecular bondlike formation from first principles
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.79.174202/fulltext
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1. (In)GaAsN-based type-II “W” quantum-well lasers for emission at λ=1.55 μm
2. MOVPE growth and photoluminescence of wurtzite InN
3. Potential performance of indium-nitride-based devices
4. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
5. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system
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