Clustering in gallium ion beam sputtered compound materials driven by bond strength and interstitial/vacancy reaction-Reference-Cited by-同舟云学术

Clustering in gallium ion beam sputtered compound materials driven by bond strength and interstitial/vacancy reaction

Published:2023-09-04 Issue:10 Volume:123 Page:
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Ma Zhenyu¹^ORCID,Zhang Xin¹,Liu Pu²,Deng Yong¹³^ORCID,Hu Wenyu³^ORCID,Chen Longqing⁴^ORCID,Zhu Jun⁵,Chen Sen⁶,Wang Zhengshang⁷^ORCID,Shi Yuechun⁸,Ma Jian¹^ORCID,Wang Xiaoyi¹^ORCID,Qiu Yang³^ORCID,Zhang Kun⁴^ORCID,Cui Xudong⁹,Walther Thomas¹⁰^ORCID

Affiliation:

1. Southwest Minzu University, State Ethnic Affairs Commission 1 , Chengdu 610041, China

2. NCS Testing Technology Co. LTD 2 , Chengdu 610041, China

3. Pico center, SUSTech Core Research Facilities, Southern University of Science and Technology 3 , Shenzhen 518055, China

4. Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University 4 , Chengdu 610064, China

5. College of Physical Science and Technology, Sichuan University 5 , Chengdu 610064, China

6. Laboratory for Shock Wave and Detonation Physics, Institute of Fluid Physics, China Academy of Engineering Physics 6 , Mianyang, Sichuan 621900, China

7. Sichuan Research Center of New Materials 7 , 596 Yinhe Road, Shuangliu, Chengdu 610200, China

8. Yongjiang Laboratory 8 , Ningbo 315000, China

9. Institute of Chemical Materials, China Academy of Engineering Physics 9 , Mianyang 621900, China

10. Department Electronic and Electrical Engineering, University of Sheffield 10 , Mappin St., Sheffield S1 3JD, United Kingdom

Abstract

The investigation of chemical reactions during ion irradiation is a frontier for the study of the ion–material interaction. In order to probe the chemistry of ion produced nanoclusters, valence electron energy loss spectroscopy (VEELS) was exploited to investigate Ga+ ion damage in Al2O3, InP, and InGaAs, where each target material has been shown to react differently to the interaction between impinging ions, recoil atoms, and vacancies: metallic Ga, ternary InGaP clusters, and metallic In clusters are formed in Al2O3, InP, and InGaAs, respectively. Supporting simulations based on Monte Carlo and crystal orbital Hamiltonian calculations indicate that the chemical constitution of cascade induced nano-precipitates is a result of a competition between interstitial/vacancy consumption rates and preferential bond formation due to differing bond strengths.

Funder

The National Natural Science Foundation of China

The Department of Science and Technology of Sichuan Province

The Technology and Innovation Commission of the Shenzhen Municipality

The Strategic Cooperation Projects fostered by Zigong goverment and Sichuan University

The Institutional Foundation of Institute of Chemical Materials,China Academy of Engineering Physics

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0161681/18110024/102101_1_5.0161681.pdf