DFT study on point defects migration through the pseudomorphic and lattice-matched InN/GaN interfaces
Author:
Publisher
Elsevier BV
Subject
Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science
Reference37 articles.
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4. GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells;Haller;Appl. Phys. Lett.,2018
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