Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth-Reference-Cited by-同舟云学术

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Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth

Published:2013-10-07 Issue:15 Volume:103 Page:152109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Zengcheng,Liu Jianping,Feng Meixin,Zhou Kun,Zhang Shuming,Wang Hui,Li Deyao,Zhang Liqun,Zhao Degang,Jiang Desheng,Wang Huaibing,Yang Hui

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4824850

Reference28 articles.

1. Recent status of white LEDs and nitride LDs

2. True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power onc-Plane GaN

3. True green InGaN laser diodes

4. Investigation of long wavelength green InGaN lasers on c -plane GaN up to 529 nm continuous wave operation

5. 500 nm electrically driven InGaN based laser diodes

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3. Thermally stable radiative recombination centers within trench structures of red multi-quantum wells;Journal of Physics D: Applied Physics;2024-03-22

4. Strain control and its effect on the optical properties of InGaN/GaN multiple quantum wells;Journal of Luminescence;2024-02

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