Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency
Author:
Affiliation:
1. Institute of Physics, Ecole polytechnique fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
Funder
Kommission für Technologie und Innovation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5007616
Reference21 articles.
1. All-optical measurements of carrier dynamics in bulk-GaN LEDs: Beyond the ABC approximation
2. Boosting Green GaInN/GaN Light-Emitting Diode Performance by a GaInN Underlying Layer
3. Enhanced radiative efficiency in blue (In,Ga)N multiple-quantum-well light-emitting diodes with an electron reservoir layer
4. InGaN/GaN-based green-light-emitting diodes with an inserted InGaN/GaN-graded superlattice layer
5. Electroluminescence efficiency of blue InGaN∕GaN quantum-well diodes with and without an n-InGaN electron reservoir layer
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