Nitrogen bonding configurations at nitrided Si(001) surfaces andSi(001)−SiO2interfaces: A first-principles study of core-level shifts
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.075307/fulltext
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1. Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness
2. Role of interfacial nitrogen in improving thin silicon oxides grown in N2O
3. Correlation of dielectric breakdown with hole transport for ultrathin thermal oxides and N2O oxynitrides
4. Comparison of ultrathin SiO2films grown by thermal oxidation in an N2O ambient with those in a 33% O2/N2ambient
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