A spectroscopy and microscopy study of silicon nanoclusters grown on β-Si3N4(0 0 0 1)/Si(1 1 1) interface-Reference-Cited by-同舟云学术

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A spectroscopy and microscopy study of silicon nanoclusters grown on β-Si3N4(0 0 0 1)/Si(1 1 1) interface

Published:2019-02 Issue: Volume:466 Page:59-62
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Allegrini P.,Sheverdyaeva P.M.,Trucchi D.M.,Ronci F.,Colonna S.,Moras P.,Flammini R.

Funder

European Community’ s Seventh Framework Programme

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference28 articles.

1. Surface and interface structures of epitaxial silicon nitride on Si(111)

2. Electronic structure and charge transfer in α- andβ−Si3N4and at theSi(111)/Si3N4(001)interface

3. Properties of high-k/ultrahigh purity silicon nitride stacks

4. Nearly-free electronlike surface resonance of aβ−Si3N4(0001)/Si(111)−8×8interface

5. CrystallineSi3N4thin films on Si(111) and the4×4reconstruction onSi3N4(0001)

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evidence of silicide at the Ni/β-Si3N4(0001)/Si(111) interface;Applied Surface Science;2023-06

2. Effect of a subnanometer thin insulator layer at the Ag/Si(111) interface through the observation of quantum well states;Physical Review Materials;2021-08-30

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