CrystallineSi3N4thin films on Si(111) and the4×4reconstruction onSi3N4(0001)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.R2146/fulltext
Reference20 articles.
1. Making silicon nitride film a viable gate dielectric
2. GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxy
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