Properties of high-k/ultrahigh purity silicon nitride stacks-Reference-Cited by-同舟云学术

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Properties of high-k/ultrahigh purity silicon nitride stacks

Published:2004-07 Issue:4 Volume:22 Page:1146-1151
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Shi X.,Shriver M.,Zhang Z.,Higman T.,Campbell S. A.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1759355

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nonthermal plasma synthesized silicon-silicon nitride core–shell nanocrystals with enhanced photoluminescence;Journal of Physics D: Applied Physics;2021-09-28

2. Morphology and Magneto‐Transport in Exfoliated Graphene on Ultrathin Crystalline β‐Si 3 N 4 (0001)/Si(111);Advanced Materials Interfaces;2020-04-19

3. A spectroscopy and microscopy study of silicon nanoclusters grown on β-Si3N4(0 0 0 1)/Si(1 1 1) interface;Applied Surface Science;2019-02

4. Oxidation of the 8 × 8-reconstructed β-Si3N4(0 0 0 1) surface: A photoemission study;Applied Surface Science;2015-11

5. Nearly-free electronlike surface resonance of aβ−Si3N4(0001)/Si(111)−8×8interface;Physical Review B;2015-02-09

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