Electrically inactive nitrogen complex in Si oxynitride
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.233205/fulltext
Reference36 articles.
1. Boron Diffusion Through Pure Silicon Oxide and Oxynitride Used for Metal‐Oxide‐Semiconductor Devices
2. Boron diffusion through thin gate oxides: Influence of nitridation and effect on the Si/SiO2interface electrical characteristics
3. Charge-trapping properties of gate oxide grown on nitrogen-implanted silicon substrate
4. Atomic hydrogen‐induced interface degradation of reoxidized‐nitrided silicon dioxide on silicon
5. Suppression of stress‐induced leakage current in ultrathin N2O oxides
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