Atomic hydrogen‐induced interface degradation of reoxidized‐nitrided silicon dioxide on silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110990
Reference23 articles.
1. Trap creation in silicon dioxide produced by hot electrons
2. Interface and bulk trap generation in metal‐oxide‐semiconductor capacitors
3. Trapping and trap creation studies on nitrided and reoxidized‐nitrided silicon dioxide films on silicon
4. Generation of interface states in nitrided oxide gate dielectrics by ionizing radiation and Fowler–Nordheim stressing
5. Electrical and physical properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processing
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