Understanding Si adsorption on GaN(0001) surfaces using first-principles calculations
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.73.205314/fulltext
Reference50 articles.
1. Adsorption and incorporation of silicon at GaN(0001) surfaces
2. The Blue Laser Diode
3. Growth and applications of Group III-nitrides
4. Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001)
5. Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy
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