Adsorption and incorporation of silicon at GaN(0001) surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1452785
Reference12 articles.
1. Native defects and impurities in GaN
2. Activation energies of Si donors in GaN
3. Anti-Surfactant in III-Nitride Epitaxy -- Quantum Dot Formation and Dislocation Termination --
4. The formation of GaN dots on AlxGa1−xN surfaces using Si in gas-source molecular beam epitaxy
5. Structural and optical properties of Si-doped GaN
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