Structural and optical properties of Si-doped GaN
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.2812/fulltext
Reference26 articles.
1. Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy
2. Activation energies of Si donors in GaN
3. Silicon doping of GaN using disilane
4. Effect of Si doping on the dislocation structure of GaN grown on the A‐face of sapphire
5. Luminescence from growth topographic features in GaN:Si films
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