Transient photoconductivity ofa-Si1−xGex:H alloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.1081/fulltext
Reference16 articles.
1. Guiding Principle in the Preparation of High-Photosensitive Hydrogenated Amorphous Si-Ge Alloys from Glow-Discharge Plasma
2. Comparative study of time‐resolved conductivity measurements in hydrogenated amorphous silicon
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Transient-conductivity change induced by laser-pulsed excitation in semimetal films;Physical Review B;1994-07-15
2. Mobility field dependence in a-Ge:H, a-SiGe:H, compensated a-Si: H, amorphous multilayer Si/SiGe/Si and the long-range potential fluctuation model;Philosophical Magazine B;1994-07
3. Recombination of Excess Carriers at High Excitation Density in Amorphous Silicon;MRS Proceedings;1993-01-01
4. In-Situ Quality Control of the Production of Semiconductor Devices by Microwave Photoconductivity Measurements;MRS Proceedings;1992
5. Optoelectronic Properties of a-SiC:H Studied by Time-Resolved Microwave Photoconductivity and Photoinduced Absorption Measurements;MRS Proceedings;1992
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