Mobility field dependence in a-Ge:H, a-SiGe:H, compensated a-Si: H, amorphous multilayer Si/SiGe/Si and the long-range potential fluctuation model-Reference-Cited by-同舟云学术

Mobility field dependence in a-Ge:H, a-SiGe:H, compensated a-Si: H, amorphous multilayer Si/SiGe/Si and the long-range potential fluctuation model

Published:1994-07 Issue:1 Volume:70 Page:109-120
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Liu E. Z.¹,Wickboldt P.²,Wetsel A. E.²,Pang D.³,Chen J. H.⁴,Paul W.²

Affiliation:

1. b R&D Department , Chartered Semiconductor Manufacturer Pte Ltd. , 2 Science Park Drive, Singapore Science Park , 0511 , Singapore

2. a Division of Applied Sciences , Harvard University , Cambridge , MA , 02138 , USA

3. c Department of Electrical Engineering , Beijing Polytechnic University , Beijing , 100022 , P.R. China

4. d Department of Physics , Boston College , Chestnut Hill , MA , 02167 , USA

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/01418639408240199

Reference34 articles.

1. Allan , D. LeComber , P. G. and Spear , W. E. Proceedings of the Seventh International Conference on Amorphous and Liquid Semiconductors. Edited by: Spear , W. E. pp.323Bristol: Institute of Physics.

2. High-field electron drift in a-Si:H

3. Nonlinear photocarrier drift in hydrogenated amorphous silicon-germanium alloys

4. Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defects

5. a-Si/sub 1-x/C/sub x/:H alloys for multijunction solar cells

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