Optoelectronic Properties of a-SiC:H Studied by Time-Resolved Microwave Photoconductivity and Photoinduced Absorption Measurements

Abstract

ABSTRACTThe optoelectronic properties of a-SiC:H alloys with different carbon content are investigated with time resolved photoconductivity and photoinduced absorption measurements. It is shown that the electron drift mobility decreases with increasing carbon content. Also a weak increase of deep electron trapping with increasing carbon content is suggested by the experimental data. The recombination does not seem to be strongly changed by the presence of carbon at least at low carbon content.