The influence of deposition temperature and annealing temperature on the optoelectronic properties of hydrogenated amorphous silicon films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347444
Reference12 articles.
1. Substrate temperature dependence of the growth kinetics and opto-electronic properties of a-Si:H films deposited by RF glow discharge
2. Reduction of defects by high temperature annealing (150°C–240°C) in hydrogenated amorphous silicon films deposited at room temperature
3. Annealing effect on structure and properties of a-Si:H prepared at high deposition-rate
4. The study of charge carrier kinetics in semiconductors by microwave conductivity measurements. II.
5. Comparative study of time‐resolved conductivity measurements in hydrogenated amorphous silicon
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