Pure valley current and negative differential resistance in optoelectronic superlattices based on monolayer transition metal dichalcogenides
Author:
Funder
National Natural Science Foundation of China
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.106.035411/fulltext
Reference46 articles.
1. Resonant tunneling in semiconductor double barriers
2. Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment
3. Insights into negative differential resistance in MoS2 Esaki diodes: A first-principles perspective
4. Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes
5. Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy
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