Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3484280
Reference15 articles.
1. Resonant Tunneling Diodes for Sub-Terahertz and Terahertz Oscillators
2. Valence‐band discontinuity between GaN and AlN measured by x‐ray photoemission spectroscopy
3. AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy
4. Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures
5. Vertical transport in group III‐nitride heterostructures and application in AlN/GaN resonant tunneling diodes
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