Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

Published:2016-08-22 Issue:8 Volume:109 Page:083504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Growden Tyler A.¹^ORCID,Storm David F.²,Zhang Weidong³,Brown Elliott R.³,Meyer David J.²,Fakhimi Parastou¹^ORCID,Berger Paul R.¹

Affiliation:

1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

2. U.S. Naval Research Laboratory, Washington, DC 20375, USA

3. Departments of Physics and Electrical Engineering, Wright State University, Dayton, Ohio 45435, USA

Funder

Office of Naval Research (ONR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4961442

Reference28 articles.

1. Resonant tunneling in semiconductor double barriers

2. Negative Differential Resistance Devices and Circuits

3. The effect of internal fields on tunneling current in strained GaN/AlxGa1−x N(0001) structures

4. Vertical transport in group III‐nitride heterostructures and application in AlN/GaN resonant tunneling diodes

5. Effects of substrate quality and orientation on the characteristics of III-nitride resonant tunneling diodes

Cited by 57 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Double barrier structure of Mo/AlN/Mo/AlN/Mo multilayer and its resonant tunneling effect;Vacuum;2024-10

2. Gallium nitride-based resonant tunneling diode oscillators;Applied Physics Letters;2024-09-09

3. High-performance negative differential resistance characteristics in homoepitaxial AlN/GaN double-barrier resonant tunneling diodes;Japanese Journal of Applied Physics;2024-08-01

4. Nonvolatile memory operations using intersubband transitions in GaN/AlN resonant tunneling diodes grown on Si(111) substrates;Journal of Applied Physics;2024-04-10

5. Record peak current density of over 1500 kA/cm2 in highly scaled AlN/GaN double-barrier resonant tunneling diodes on free-standing GaN substrates;Applied Physics Letters;2024-02-12

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3