Anisotropic strain relaxation of Ge nanowires on Si(113) studied by medium-energy ion scattering-Reference-Cited by-同舟云学术

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Anisotropic strain relaxation of Ge nanowires on Si(113) studied by medium-energy ion scattering

Published:2003-01-22 Issue:3 Volume:67 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Sumitomo Koji,Omi Hiroo,Zhang Zhaohui,Ogino Toshio

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.67.035319/fulltext

Reference17 articles.

1. Shape transition in growth of strained islands: Spontaneous formation of quantum wires

2. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes

3. Coarsening of Self-Assembled Ge Quantum Dots on Si(001)

4. Strain Evolution in CoherentGe/SiIslands

5. Growth of Ge on Si(100) and Si(113) studied by STM

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1. Ion blocking dip shape analysis around a LaAlO3/SrTiO3 interface;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2018-05

2. Bibliography;Swift Ion Beam Analysis in Nanosciences;2017-08-25

3. Strain state of GaN nanodisks in AlN nanowires studied by medium energy ion spectroscopy;Nanotechnology;2012-10-04

4. Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering;physica status solidi (a);2011-11-11

5. From nanoislands to nanowires: Growth of germanium on gallium-terminated silicon surfaces;physica status solidi (a);2009-06-22

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