Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering-Reference-Cited by-同舟云学术

Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering

Published:2011-11-11 Issue:2 Volume:209 Page:262-265
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Jalabert D.,Pelloux-Gervais D.,Béché A.,Hartmann J. M.,Gergaud P.,Rouvière J. L.,Canut B.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201127502/fullpdf

Reference16 articles.

1. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

2. The Crystallographic Properties of Strained Silicon Measured by X-Ray Diffraction

3. Structural characterization of strained silicon grown on a SiGe buffer layer

4. Strain evaluation of strained-Si layers on SiGe by the nano-beam electron diffraction (NBD) method

5. Characterization of Si/GexSi1−x structures by micro-Raman imaging

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