Strain evaluation of strained-Si layers on SiGe by the nano-beam electron diffraction (NBD) method
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference5 articles.
1. Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology;Mizuno;Electron Device Lett,2000
2. Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors;Welser;Electron Device Lett,1994
3. Usuda K, Numata T, Tezuka T, Sugiyama N, Moriyama Y, Nakaharai S, Takagi S. Strain evaluation for thin strained-Si on SGOI and strained-Si on nothing (SSON) structures using nano-beam electron diffraction (NBD). In: IEEE International SOI Conference Proceedings; 2003. p. 138.
4. Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation;Usuda;Appl Surf Sci,2004
5. Anastassakis. In: Light scattering in semiconductor structures and superlattices.
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