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On the use of MEIS cartography for the determination of Si 1–x Ge x thin-film strain

  • Published:2016-07 Issue: Volume:611 Page:101-106
  • ISSN:0040-6090
  • Container-title:Thin Solid Films
  • language:en
  • Short-container-title:Thin Solid Films

Author:

Avila T.S.,Fichtner P.F.P.,Hentz A.,Grande P.L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent advances in MEIS;Surface and Interface Analysis;2019-11-28

2. Crystal quality of SiGe films fabricated by the condensation technique and characterized by medium energy ion scattering;Semiconductor Science and Technology;2019-05-08

3. Synthesis and Growth Mechanism of Stable Prenucleated (≈0.8 nm Diameter) PbS Quantum Dots by Medium Energy Ion Scattering Spectroscopy;Materials;2019-04-03

4. Dependence of ion channeling on relative atomic number in compounds;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2018-11

5. A comparison of the analysis of non-centrosymmetric materials based on ion and electron beams;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2018-09
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