Interband transitions inInxGa1−xAs/In0.52Al0.48As single quantum wells studied by room-temperature modulation spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.7198/fulltext
Reference49 articles.
1. Observation of Superlattice Effects on the Electronic Bands of Multilayer Heterostructures
2. Electronic states and thicknesses of GaAs/GaAlAs quantum wells as measured by electroreflectance and spectroscopic ellipsometry
3. Electroreflectance spectroscopy from quantum well structures in an electric field
4. Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation‐doped heterojunctions
5. Unambiguous identification of heavy-and light-hole states in the Photoreflectance of InxGa1−xAs/GaAs heterostructures
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1. Energy dependence of electron effective mass and effect of wave function confinement in a nanoscale In0.53Ga0.47As/In0.52Al0.48As quantum well;Journal of Applied Physics;2013-06-21
2. Evidence of nonparabolicity and size of wave function confined in In0.53Ga0.47As/In0.52Al0.48As multi quantum wells;Journal of Applied Physics;2008-05-15
3. Nonparabolic tendency of electron effective mass estimated by confined states in In0.53Ga0.47As/In0.52Al0.48As multi-quantum-well structures;Superlattices and Microstructures;1999-07
4. Photocurrent spectroscopy and study of subband parameters for heavy holes in nanoscale In0.53Ga0.47As/In0.52Al0.48As multiquantum well structures;Journal of Applied Physics;1999-04-15
5. Uniformity study in PM-HEMT structures and devices by optical and electrical characterization;Microelectronic Engineering;1998-08
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