Uniformity study in PM-HEMT structures and devices by optical and electrical characterization-Reference-Cited by-同舟云学术

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Uniformity study in PM-HEMT structures and devices by optical and electrical characterization

Published:1998-08 Issue: Volume:43-44 Page:567-573
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Androulidaki M.,Michelakis C.,Lagadas M.,Foukaraki V.,Panayotatos P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Interband transitions inInxGa1−xAs/In0.52Al0.48As single quantum wells studied by room-temperature modulation spectroscopy

2. Band-Structure Analysis from Electro-Reflectance Studies

3. Photoreflectance modulation mechanisms in GaAs-AlxGa1−xAs multiple quantum wells

4. Two‐dimensional electron gas effects in the electromodulation spectra of a pseudomorphic Ga0.78Al0.22As/In0.21Ga0.79As/GaAs modulation‐doped quantum well structure

5. Optical determination of carrier density in pseudomorphic AlGaAs/InGaAs/GaAs hetero‐field‐effect transistor structures by photoluminescence

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