Nonparabolic tendency of electron effective mass estimated by confined states in In0.53Ga0.47As/In0.52Al0.48As multi-quantum-well structures
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference11 articles.
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1. An Improved Virtual-Source-Based Transport Model for Quasi-Ballistic Transistors—Part I: Capturing Effects of Carrier Degeneracy, Drain-Bias Dependence of Gate Capacitance, and Nonlinear Channel-Access Resistance;IEEE Transactions on Electron Devices;2015-09
2. Energy dependence of electron effective mass and effect of wave function confinement in a nanoscale In0.53Ga0.47As/In0.52Al0.48As quantum well;Journal of Applied Physics;2013-06-21
3. Evidence of nonparabolicity and size of wave function confined in In0.53Ga0.47As/In0.52Al0.48As multi quantum wells;Journal of Applied Physics;2008-05-15
4. Influence of Doping Concentration and Ambient Temperature on the Cross-Plane Seebeck Coefficient of InGaAs/InAlAs superlattices;MRS Proceedings;2003
5. Nonparabolic effective masses of conduction subbands in InGaAs/InAlAs quantum wells in normal and parallel directions;Physica B: Condensed Matter;2001-04
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