Structural models and core-level shifts of the oxidation of the Si(001) surface
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.70.235321/fulltext
Reference43 articles.
1. The interaction of molecular and atomic oxygen with Si(100) and Si(111)
2. Kinetics of Initial Layer-by-Layer Oxidation of Si(001) Surfaces
3. Backbond Oxidation of the Si(001) Surface: Narrow Channel of Barrierless Oxidation
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2. Adsorption and dynamics of group IV, V atoms and molecular oxygen on semiconductor group IV (0 0 1) surfaces;Journal of Physics: Condensed Matter;2016-06-14
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