DFT Investigation of O2 Adsorption on Si(001)-(221):H
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry
Link
http://cps.scitation.org/doi/pdf/10.1360/cjcp2006.19%286%29.485.3
Reference20 articles.
1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
2. Strong Explosive Interaction of Hydrogenated Porous Silicon with Oxygen at Cryogenic Temperatures
3. Photo-oxidation effects in porous silicon luminescence
4. Effect of oxygen on the optoelectronic properties of amorphous hydrogenated silicon
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1. First principles analysis of the initial oxidation of Si(001) and Si(111) surfaces terminated with H and CH3;The Journal of Chemical Physics;2012-02-14
2. First principle calculation on electronic and magnetic properties of new half-metal TiFe2O4;Physica Scripta;2007-11-26
3. Theoretical Study on Mechanism of C5H7 +O2 Reaction;Chinese Journal of Chemical Physics;2007-06
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