Surface-structure analysis of sulfur-passivated GaAs(111)Aand GaAs(111)Bby x-ray standing-wave triangulation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.11037/fulltext
Reference53 articles.
1. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
2. Effects of Na2S and (NH4)2S edge passivation treatments on the dark current‐voltage characteristics of GaAspndiodes
3. Schottky barrier formation on (NH4)2S‐treatedn‐ andp‐type (100)GaAs
4. The Effect of (NH4)2S Treatment on the Interface Characteristics of GaAs MIS Structures
5. A Model to Explain the Effective Passivation of the GaAs Surface by (NH4)2SxTreatment
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Atomic structure and passivated nature of the Se-treated GaAs(111)B surface;Scientific Reports;2018-01-19
2. Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy;Journal of Materials Research;2016-01-06
3. The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices;Journal of Physics: Condensed Matter;2013-07-17
4. Surface Structures of Clean and Sulfur-Treated GaP(111)A Studied Using AES, LEED, and STM;e-Journal of Surface Science and Nanotechnology;2009
5. Surface structure determination using x-ray standing waves;Reports on Progress in Physics;2005-03-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3