Surface Structures of Clean and Sulfur-Treated GaP(111)A Studied Using AES, LEED, and STM

Author:

Itagaki S.1,Shimomura M.1,Sanada N.1,Fukuda Y.1

Affiliation:

1. Research Institute of Electronics, Shizuoka University, Japan

Publisher

Surface Science Society Japan

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics,Bioengineering,Biotechnology

Reference29 articles.

1. [1] W. Mönch, Semiconductor Surfaces and Interfaces, Springer-Verlag (Berlin), 2001.

2. Vacancy-Buckling Model for the (2×2) GaAs(111) Surface

3. [3] C. H. Li, Y. Sun, D. C. Law, S. B. Visbeck, and R. F. Hicks, Phys. Rev. B 68, 085320 (2003).

4. Vacancy-Induced 2×2 Reconstruction of the Ga(111) Surface of GaAs

5. GaAs(111)A-(2×2) reconstruction studied by scanning tunneling microscopy

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