GaAs(111)A-(2×2) reconstruction studied by scanning tunneling microscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.41.3226/fulltext
Reference11 articles.
1. Theory of polar semiconductor surfaces
2. Atomic structure of polar (111) surfaces of GaAs and ZnSe
3. Structure of GaAs(001)(2×4)−c(2×8)Determined by Scanning Tunneling Microscopy
4. Vacancy-Buckling Model for the (2×2) GaAs(111) Surface
5. Comparison between the Electronic Structures of GaAs(111) andGaAs(1―1―1―)from Angle-Resolved Photoemission
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